HZU22L

HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0300Z Rev.3.00 Jul.28.2004 Features Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU-L Series Laser Mark Type No. Package Code URP Pin Arrangement Cathode mark Mark 1 061 2 1. Cathode 2. Anode Rev.3.00, Jul.28.2004, page 1 of 6 HZU-L Series Absolute Maximum Ratings Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 150 150 −55 to +150 (Ta = 25°C) Unit mW °C °C Electrical Characteristics Zener Voltage Reverse Current Type HZU6L Grade A1 VZ (V)*1 Min Max 5.2 5.5 Test Condition IZ (mA) 0.5 IR (µA) Max 1 Test Condition VR (V) 2.0 A2 5.3 5.6 A3 5.4 5.7 B1 5.5 5.8 B2 5.6 5.9 B3 5.7 6.0 C1 5.8 6.1 C2 6.0 6.3 C3 6.1 6.4 HZU7L A1 6.3 6.6 0.5 1 3.5 A2 6.4 6.7 A3 6.6 6.9 B1 6.7 7.0 B2 6.9 7.2 B3 7.0 7.3 C1 7.2 7.6 C2 7.3 7.7 C3 7.5 7.9 HZU9L A1 7.7 8.1 0.5 1 6.0 A2 7.9 8.3 A3 8.1 8.5 B1 8.3 8.7 B2 8.5 8.9 B3 8.7 9.1 C1 8.9 9.3 C2 9.1 9.5 C3 9.3 9.7 HZU11L A1 9.5 9.9 0.5 1 8.0 A2 9.7 10.1 A3 9.9 10.3 B1 10.2 10.6 B2 10.4 10.8 B3 10.7 11.1 Notes: 1. Tested with DC. 2. C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Failure cr...