I25N10

25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤36mΩ) ● Low Gate Charge(Typical:61nC) ● Low Reverse Transfer Capacitances(Typical:84pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Power switching applications ● LED Boost ● UPS power supply ● Load switch VDSS = 100V RDS(on) （TYP)= 30mΩ ID = 25A TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 25N10/I25N10/E25N10 /B25N10/D25N10 Maximum Drian-Source DC Voltage VDS 100 Maximum Gate-Drain Voltage VGS ±20 Drain Current(continuous) ID（T=25℃） （T=100℃） 30 21 Drain Current(Pulsed)(Note ...