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I4N60

ROUM

4A 600V N-channel Enhancement Mode Power MOSFET


Description
4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) (TYP)= 2.1Ω ID = 4A...



ROUM

I4N60

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