Mixer. IAM-93516 Datasheet
High Linearity Integrated GaAs Mixer
|Total Page||10 Pages|
IAM - 93516
High Linearity Integrated GaAs Mixer
Mixer using 0.5um enhancement mode pHEMT technology.
This device houses in a 3x3 LPCC package. The IAM-93516
has a built-in LO buffer amplifier and an IF amplification
stage that serve as an ideal solution for reducing board
space and delivering excellent high IIP3, gain and isolation
with a low LO drive power. The device is designed with a
differential configuration to provide good noise immunity.
The LO port is 50 ohm matched and can be driven differ-
ential or single ended. An interstage match is introduced
between the mixer and amplifier stage to allow device
tuning at the desired RF and LO frequency. The interstage
match can be a simple low pass, high pass or intermedi-
ate frequency trap. The amplifier output port is 200 ohm
matched and fully differential. The simple matching at
the RF port provides for optimum input return loss, noise
figure and IIP3 performance.
The IAM-93516 is ideally suited for frequency down con-
version for base station radio card receiver, microwave link
receiver, MMDS, modulation and demodulation for receiver
and general purpose resistive FET mixer, which require high
linearity. All devices are 100% RF and DC tested.
• Frequency down converter for base station radio card,
microwave link transceiver, and MMDS
• Modulation and demodulation for receiver
• General purpose resistive FET mixer for other high
• DC =5V @ 111mA (Typ.)
• RF =1.91 GHz, PinRF = -10 dBm;
• LO =1.7 GHz, PinLO = 0 dBm;
• IF = 210 MHz unless otherwise specified
• High Linearity: 23.1 dBm IIP3(typ)
• Conversion Gain: 9.4 dB typical
• Low Noise Figure: 11.6 dB
• Wide band operation:
• 400-3000 MHz RF & LO input
• 70 – 300 MHz IF output
• Fully differential or single ended operation
• High P1dB: 19.3 dB typical
• Consistent RF performance over LO Power
• Low current consumption: 5V@ 111mA typical
• Excellent uniformity in product specifications
• 3mm x 3mm x 0.9mm LPCC package
• MTTF > 300 years
• MSL-1 and Lead-free.
Pin Connections and Package Marking
Package marking provides orientation and identification
“M2” = Device Code
“X” = Month code indicates the month of manufacture
MIX_OUT+ RF+ 1 IFA_IN+
MIX_OUT - 10 11 RF - 1 IFA_IN -
1.0 Absolute Maximum Ratings 
Supply Voltage 
CW RF Input Power 
CW LO Input Power 
Thermal Resistance 
-65 to 150
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Determined at DC quiescent conditions and TA = 25°C.
3. Board (package belly) temperature TB is 25°C. Derate 25 mW/°C for TB > 130 °C.
4. Channel-to-board thermal resistance measured using Infra Red Imaging Method and 150o C Liquid Crystal Measurement method.
2.0 Product Consistency Distribution Charts [5,6]
10 10 10 110 111 11 11 11
Figure 1. ID (mA)  Nominal = 111.2mA
10 Stdev = 0.1
. .0 . . . .
10 Stdev = 0.
0 - Std
Figure 2. GAIN (dB)  Nominal = 9.4dB
Figure 3. IIP3 (dBm)  Nominal = 23.1dBm
|Features||Datasheet pdf IAM - 93516 High Linearity Integrated Ga As Mixer Data Sheet Description Appli cations AvagoTechnologies’ IAM-93516 isahighlinearityGaAsFET Mixer using 0.5 um enhancement mode pHEMT technology. T his device houses in a 3x3 LPCC package . The IAM-93516 has a built-in LO buffe r amplifier and an IF amplification sta ge that serve as an ideal solution for reducing board space and delivering exc ellent high IIP3, gain and isolation wi th a low LO drive power. The device is designed with a differential configurat ion to provide good noise immunity. The LO port is 50 ohm matched and can be d riven differential or single ended. An interstage match is introduced between the mixer and amplifier stage to allow device tuning at the desired RF and LO frequency. The interstage match can be a simple low pass, high pass or interme diate frequency trap. The amplifier out put port is 200 ohm matched and fully d ifferential. The simple matching at the RF port provides for optimum input return loss, noise figure a.|
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