IC61LV12816

IC61LV12816 Document Title 128K x 16 Hight Speed SRAM with 3.3V Revision History Revision No 0A 0B 1 Draft Date Remark September 12,2001 April 23,2004 History Initial Draft Revise typo on page 6 2 3 4 5 6 7 8 9 10 11 12 The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices. Integrated Circuit Solution, Inc. AHSR024-0B 04/23/2004 1 IC61LV12816 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES High-speed access time: 8, 10, 12, and 15 ns CMOS low power operation TTL and CMOS compatible interface levels Single 3.3V ± 10%power supply Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial temperature available DESCRIPTION The ICSI IC61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) c...