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IC62LV12816L IC62LV12816LL
IC62LV12816L IC62LV12816LL
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS ...
www.DataSheet4U.com
IC62LV12816L IC62LV12816LL
IC62LV12816L IC62LV12816LL
128K x 16 LOW
VOLTAGE, ULTRA LOW POWER
CMOS STATIC RAM
.EATURES
High-speed access times: 55, 70, 100 ns
CMOS low power operation -- 60 mW (typical) operating -- 3 µW (typical)
CMOS standby TTL compatible interface levels Single 2.7V-3.6V Vcc power supply .ully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial temperature available Available in the 44-pin TSOP-2 and 48-pin 6*8mm T.-BGA
DESCRIPTION The 1+51 IC62LV12816L and IC62LV12816LL are high-speed,
2.097,152-bit static RAMs organized as 131,072 words by 16 bits. They are fabricated using 1+51's high-performance
CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected) or when CE is low and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced by using
CMOS input levels. Easy memory expansion is provided by using Chip Enable Output and Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IC62LV12816L and IC62LV12816LL are packaged in the JEDEC standare 44-pin 400mil TSOP-2 and 48-pin 6*8mm T.-BGA.
.UNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 16 MEMORY ARRAY
VCC G...