ICE10N60FP
N-Channel Enhancement Mode MOSFET
ID V(BR)DSS rDS(ON)
Qg
Product Summary
TA = 25°C ID = 250uA VGS = 10V VD...
ICE10N60FP
N-Channel Enhancement Mode
MOSFET
ID V(BR)DSS rDS(ON)
Qg
Product Summary
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
10A 600V 0.28Ω 41nC
Max Min Typ Typ
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
ID ID, pulse
EAS IAR dv/dt
Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot Tj, Tstg
Gate Source
Voltage
Power Dissipation Operating and Storage Temperature Mounting Torque
Pin Description:
TO-220
G
Value
10 30 340 5 50
±20 ±30
35
-55 to +150 50
Unit A A mJ A
V/ns
V
W °C Ncm
Conditions TC = 25°C TC = 25°C ID = 8.3A Limited by Tjmax VDS = 480V, ID = 10A, Tj = 125°C Static AC (f>Hz) TC = 25°C
M 2.5 screws
D S
Symbol Parameter
Values Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
- - 3.5
RthJA Thermal Resistance, Junction to Ambient
- - 80
Tsold Soldering Temperature, Wave Soldering Only Al- - - 260 lowed At Leads
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS VGS(th) IDSS
Drain to Source Breakdown
Voltage Gate Threshold
Voltage
Zero Gate
Voltage Drain Current
600 630 2.1 3 3.9 - 0.1...