MOSFET. ICE10N73 Datasheet

ICE10N73 Datasheet PDF


Part Number

ICE10N73

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Icemos

Total Page 8 Pages
PDF Download
Download ICE10N73 Datasheet


ICE10N73 Datasheet
Preliminary Data Sheet
ICE10N73
ICE10N73 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=250uA
VGS=10V
VDS=480V
10A
730V
0.25Ω
82nC
D
Max
Min
Typ
Typ
G
S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal
Heatsink
1=Gate, 2=Drain,
3=Source.
Maximum ratings b , at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=7.5A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=10A,
Tj=125oC
Gate source voltage
static
VGS
AC (f>1Hz)
Power dissipation
Ptot Tc=25oC
Operating and storage temperature
Tj, Tstg
Mounting torque
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet Specifications subject to change
Value
10
35
280
7.5
50
±20
±30
208
-55 to +150
60
Unit
A
A
mJ
A
V/ns
V
W
oC
Ncm
SP-10N73-000-1c
04/16/2013
1

ICE10N73 Datasheet
Preliminary Data Sheet
ICE10N73
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction-
case a
RthJC
Thermal resistance, junction-
ambient a
RthJA
Soldering temperature, wave
soldering only allowed at leads
T sold
leaded
1.6mm (0.063in.) from
case for 10 s
Values
Unit
Min Typ Max
- - 0.6
oC/W
- - 62
- - 260 oC
Electrical characteristics b , at Tj=25oC, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS
Gate threshold voltage
VGS(th)
Zero gate voltage drain current IDSS
Gate source leakage current
Drain-source
on-state resistance
IGSS
RDS (on)
VGS=0 V, ID=250µA
VDS=VGS, ID=250µA
VDS=730V, VGS=0V,
Tj=25oC
VDS=730V, VGS=0V,
Tj=150oC
VGS=±20 V, VDS=0V
VGS=10V, ID=5A, Tj=25oC
VGS=10V, ID=5A,
Tj=150oC
730
2.5
-
-
-
-
-
Gate resistance
RG f=1 MHZ, open drain
-
760 -
3 3.5
0.5 5
20 -
- 100
0.25 0.35
0.7 -
4-
V
µA
nA
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Transconductance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
gfs
td(on)
tr
td(off)
tf
VGS=0 V, VDS=25 V,
f=1 MHz
VDS>2*ID*RDS, ID=5A
VDS=380V, VGS=10V,
ID=10A, RG=4(External)
-
-
-
-
-
-
-
-
2650
943
8
20
10
5
67
4.5
-
-
-
-
-
-
-
-
pF
S
ns
SP-10N73-000-1c
04/16/2013
2


Features Datasheet pdf Preliminary Data Sheet ICE10N73 ICE10N7 3 N-Channel Enhancement Mode MOSFET Fea tures • Low rDS(on) • Ultra Low Gat e Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS ) capability • High peak current capa bility • Increased transconductance p erformance • Optimized design for hig h performance power systems ID V(BR)DS S rDS(on) Qg Product Summary TA=25oC ID=250uA VGS=10V VDS=480V 10A 730V 0.2 5Ω 82nC D Max Min Typ Typ G S T022 0 ICEMOS AND ITS SISTER COMPANY 3D SEM I OWN THE FUNDAMENTAL PATENTS FOR SUPER JUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINI NG LIFE. THIS PORTFOLIO HAS GRANTED PAT ENTS ISSUED IN USA, CHINA, KOREA, JAPAN , TAIWAN & EUROPE. Standard Metal Heat sink 1=Gate, 2=Drain, 3=Source. Maximu m ratings b , at Tj=25oC, unless otherw ise specified Parameter Symbol Condi tions Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=7.5A Avalanche current, repetiti.
Keywords ICE10N73, datasheet, pdf, Icemos, N-Channel, Enhancement, Mode, MOSFET, CE10N73, E10N73, 10N73, ICE10N7, ICE10N, ICE10, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent




@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)