MOSFET. ICE11N65FP Datasheet

ICE11N65FP Datasheet PDF


Part Number

ICE11N65FP

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Icemos

Total Page 9 Pages
PDF Download
Download ICE11N65FP Datasheet


ICE11N65FP Datasheet
Preliminary Data Sheet
ICE11N65FP
ICE11N65FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
11A
ID=250uA
VGS=10V
VDS=480V
650V
0.25
59nC
D
G
S
Max
Min
Typ
Typ
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220 Full-PAK
Isolated (T0-220)
Maximum ratings b , at Tj=25°C, unless otherwise specified
Parameter
Symbol
Conditions
1=Gate, 2=Drain,
3=Source
Value
Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=7.5A
11 A
35 A
460 mJ
Avalanche current, repetitive
I AR limited by Tjmax
7.5
A
MOSFET dv/dt ruggedness
Gate source voltage
dv/dt
VGS
VDS=480V, ID=11A,
Tj=125oC
static
AC (f>1Hz)
50
±20
±30
V/ns
V
Power dissipation
Operating and storage temperature
Mounting torque
Ptot
Tj, Tstg
Tc=25°C
M 2.5 screws
35
-55 to +150
50
W
°C
Ncm
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet Specifications subject to change
SP-11N65FP-000-3a
06/13/2013
Free Datasheet http://www.datasheet41u.com/

ICE11N65FP Datasheet
Preliminary Data Sheet
ICE11N65FP
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction-
case a
RthJC
Thermal resistance, junction-
ambient a
RthJA
Soldering temperature, wave
soldering only allowed at leads
T sold
leaded
1.6mm (0.063in.) from
case for 10 s
Values
Unit
Min Typ Max
- - 3.5
°C/W
- - 80
- - 260 °C
Electrical characteristics b , at Tj=25°C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS
Gate threshold voltage
VGS(th)
Zero gate voltage drain current IDSS
Gate source leakage current
Drain-source
on-state resistance
IGSS
RDS (on)
VGS=0 V, ID=250µA
VDS=VGS, ID=250µA
VDS=650V, VGS=0V,
Tj=25oC
VDS=650V, VGS=0V,
Tj=150oC
VGS=±20 V, VDS=0V
VGS=10V, ID=5.5A,
Tj=25oC
VGS=10V, ID=5.5A,
Tj=150oC
650
2.1
-
-
-
-
-
Gate resistance
RG f=1 MHZ, open drain
-
675 -
3 3.9
0.1 1
- 100
- 100
0.25 0.28
0.62 -
4.7 -
V
µA
nA
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Transconductance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
gfs
td(on)
tr
td(off)
tf
VGS=0 V, VDS=25 V,
f=1 MHz
VDS>2*ID*RDS, ID=5.5A
VDS=380V, VGS=10V,
ID=11A, RG=4(External)
-
-
-
-
-
-
-
-
1800
600
5
15
39
10
55
6
-
-
-
-
-
-
-
-
pF
S
ns
SP-11N65FP-000-3a
06/13/2013
Free Datasheet http://www.datasheet42u.com/


Features Datasheet pdf Preliminary Data Sheet ICE11N65FP ICE11 N65FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductan ce performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) F REE TA=25oC ID=250uA VGS=10V VDS=480V D 11A 650V 0.25 59nC Max Min Typ Typ Qg G S ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FO R SUPERJUNCTION MOSFETS. THE MAJORITY O F THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRAN TED PATENTS ISSUED IN USA, CHINA, KOREA , JAPAN, TAIWAN & EUROPE. T0220 Full-P AK Isolated (T0-220) 1=Gate, 2=Drain, 3 =Source Maximum ratings b Parameter Co ntinuous drain current Pulsed drain cur rent , at Tj=25°C, unless otherwise s pecified Symbol ID ID, pulse E AS I AR dv/dt Conditions Tc=25oC Tc=25oC ID=7.5A limited by Tjmax Value 11 35 460 7.5.
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