Preliminary Data Sheet
ICE11N70 ICE11N70 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Char...
Preliminary Data Sheet
ICE11N70 ICE11N70 N-Channel
Enhancement Mode
MOSFET
Features
Low rDS(on) Ultra Low Gate Charge High dv/dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Increased transconductance performance Optimized design for high performance power systems
HALOGEN
Product Summary ID V(BR)DSS rDS(on)
FREE
TA=25oC ID=250uA VGS=10V VDS=480V
D
11A 700V 0.20Ω 85nC
Max Min Typ Typ
Qg
G S T0220 Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source.
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION
MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Maximum ratings b
Parameter
, at Tj=25°C, unless otherwise specified Symbol Conditions Value Unit
Continuous drain current Pulsed drain current
Avalanche energy, single pulse Avalanche current, repetitive
MOSFET dv/dt ruggedness Gate source
voltage Power dissipation Operating and storage temperature Mounting torque
a When mounted on 1inch square 2oz copper clad FR-4
ID ID, pulse
E AS I AR dv/dt
Tc=25oC Tc=25oC
ID=7.5A limited by Tjmax VDS=480V, ID=11A, Tj=125oC Static AC (f>1Hz) Tc=25°C
11 33
280 7.5 50 ±20 ±30 108 -55 to +150
A A
mJ A V/ns
VGS Ptot Tj, Tstg
V W °C Ncm
M 3 & 3.5 screws
60
b Preliminary Data Sheet – Specifications subject to change
SP-11N70-000-4 07/17/2013
Free Datasheet http://www.datasheet...