Preliminary Data Sheet
ICE22N60 ICE22N60 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Char...
Preliminary Data Sheet
ICE22N60 ICE22N60 N-Channel
Enhancement Mode
MOSFET
Features
Low rDS(on) Ultra Low Gate Charge High dv/dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Optimized design for hard switching SMPS topologies
HALOGEN
Product Summary ID rDS(on)
FREE
TA=25oC
22A
Max Min Typ Typ
BVDSS @Tjmax ID=250uA 650V VGS=10V 0.14Ω VDS=480V 82nC
D
Qg
G S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION
MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal Heatsink
1=Gate, 2=Drain, 3=Source.
Maximum ratings b
Parameter
, at Tj=25oC, unless otherwise specified Symbol Conditions Value Unit
Continuous drain current
Pulsed drain current Avalanche energy, single pulse
ID
ID, pulse E AS
Tc=25oC
Tc=25oC ID=11.5A
22
82 690
A
A mJ
Avalanche current, repetitive
MOSFET dv/dt ruggedness Gate source
voltage Power dissipation Operating and storage temperature Mounting torque
a When mounted on 1inch square 2oz copper clad FR-4
I AR
dv/dt
limited by Tjmax
VDS=480V, ID=22A, Tj=125oC static AC (f>1Hz) Tc=25oC
10
50.0 ±20 ±30 208 -55 to +150
A
V/ns
VGS Ptot Tj, Tstg
V W
o
C
M 3 & 3.5 screws
60
Ncm
b Preliminary Data Sheet – Specifications subject to change
SP-22N60-000-3 05/15/2013
Free Datasheet http://www.datasheet4u.com/
1
Preliminary ...