ICE22N65W
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability Hig...
ICE22N65W
N-Channel Enhancement Mode
MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Product Summary
ID V(BR)DSS rDS(ON)
Qg
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
22A 650V 0.165Ω 82nC
Pin Description:
TO-247
G
Max Min Typ Typ
D
S
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse EAS IAR
dv/dt
Continous Drain Current
Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot Tj, Tstg
Gate Source
Voltage
Power Dissipation Operating and Storage Temperature Mounting Torque
22 66 690 10 50
±20 ±30
208
-55 to +150 60
A A mJ A V/ns
V
W °C Ncm
TC = 25°C TC = 25°C ID = 11.5A Limited by Tjmax VDS = 480V, ID = 22A, Tj = 125°C Static AC (f>Hz) TC = 25°C
M 3 & 3.5 screws
Symbol Parameter
Values Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case RthJA Thermal Resistance, Junction to Ambient Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
-
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS VGS(th) IDSS
Drain to Source Breakdown
Voltage Gate Threshold
Voltage
Zero Gate
Voltage Drain Current
650 2.1 -
IGSS RDS(on)
Gate Source Leakag...