ICE35N60W
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability Hig...
ICE35N60W
N-Channel Enhancement Mode
MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems
Product Summary
ID V(BR)DSS rDS(ON)
Qg
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
35A 600V 0.075Ω 187nC
Pin Description:
TO-247
G
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
ID ID, pulse
EAS IAR dv/dt
Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot Tj, Tstg
Gate Source
Voltage
Power Dissipation Operating and Storage Temperature Mounting Torque
35 103 1100 18 50
±20 ±30
313
-55 to +150 60
A A mJ A V/ns
V
W °C Ncm
TC = 25°C TC = 25°C ID = 18A Limited by Tjmax VDS = 480V, ID = 35A, Tj = 125°C Static AC (f>Hz) TC = 25°C
M 2.5 screws
Max Min Typ Typ
D
S
Symbol Parameter
Values Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case RthJA Thermal Resistance, Junction to Ambient Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
-
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS VGS(th) IDSS
Drain to Source Breakdown
Voltage Gate Threshold
Voltage
Zero Gate
Voltage Drain Current
600 2.1 -
IGSS RDS(on)
Gate Source Leakage ...