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IDB15E60

Infineon Technologies

Fast Switching EmCon Diode

IDP15E60 IDB15E60 Fast Switching EmCon Diode Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low rev...



IDB15E60

Infineon Technologies


Octopart Stock #: O-508310

Findchips Stock #: 508310-F

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IDP15E60 IDB15E60 Fast Switching EmCon Diode Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175°C operating temperature Easy paralleling Product Summary VRRM IF VF T jmax P-TO220-3.SMD 600 15 1.5 175 P-TO220-2-2. V A V °C Type IDP15E60 IDB15E60 Package P-TO220-2-2. Ordering Code Q67040-S4485 Marking D15E60 D15E60 Pin 1 C NC PIN 2 A C PIN 3 A P-TO220-3.SMD Q67040-S4484 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current TC=25°C TC=90°C Symbol VRRM IF Value 600 29.2 19.6 Unit V A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave I FSM I FRM Ptot 60 45 W 83.3 47.2 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation TC=25°C TC=90°C Operating and storage temperature Soldering temperature 1.6mm(0.063 in.) from case for 10s Tj , Tstg TS -55...+175 255 °C °C Rev.2 Page 1 2003-07-31 IDP15E60 IDB15E60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA RthJA - Values typ. 35 max. 1.8 62 62 - Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Reverse leakage current V R=600V, Tj=25°C V R=600V, Tj=150°C Symbol min. IR VF...




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