IDB18E120

Fast Switching Emitter Controlled Diode Feature 1200 V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling * RoHS compliant IDB18E120 Product Summary VRRM 1200 IF VF Tjmax 18 1.65 150 V A V °C PG-TO263-3-2 2 1 3 Type IDB18E120 Package Ordering Code Marking Pin 1 PIN 2 PIN 3 PG-TO263-3-2 - D18E120 NC C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Repetitive peak reverse voltage Continous forward current TC=25°C TC=90°C VRRM IF Surge non repetitive forward current IFSM TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current IFRM TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation TC=25°C TC=90°C Ptot Operating and storage temperature Soldering temperature reflow soldering, MSL1 Tj , Tstg TS Value 1200 31 19.8 78 47 113 54 -55...+150 260 Unit V A W °C °C Rev.2.3 Page 1 2013-07-02 IDB18E120 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Symbol Values Unit min. typ. max. RthJC RthJA RthJA - - 1.1 K/W - - 62 - - 62 - 35 - Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. Static Characteristics Reverse leakage current VR=1200V, Tj=25°C VR=1200V, Tj=150°C IR - - 100 - - 1400 Forward voltage d...