Fast Switching Emitter Controlled Diode
Feature • 1200 V Emitter Controlled technology • Fast recovery • Soft switching ...
Fast Switching Emitter Controlled Diode
Feature 1200 V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward
voltage Easy paralleling
* RoHS compliant
IDB30E120
Product Summary
VRRM
1200
IF VF Tjmax
30 1.65 150
V A V °C
PG-TO263-3-2
2
1 3
Type IDB30E120
Package
Ordering Code Marking Pin 1 PIN 2 PIN 3
PG-TO263-3-2
-
D30E120 NC
C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse
voltage Continous forward current
TC=25°C TC=90°C
VRRM IF
Surge non repetitive forward current
IFSM
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward current
IFRM
TC=25°C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25°C TC=90°C
Ptot
Operating and storage temperature Soldering temperature
reflow soldering, MSL1
Tj , Tstg TS
Value 1200
50 30 102
76.5
138 66 -55...+150 260
Unit V A
W
°C °C
Rev.2.3
Page 1
2013-07-02
IDB30E120
Thermal C...
