IDC04S60CE
2nd generation thinQ!TM SiC Schottky Diode
Features: Revolutionary semiconductor material Silicon Carbide • S...
IDC04S60CE
2nd generation thinQ!TM SiC Schottky Diode
Features: Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery www.DataSheet4U.net High surge current capability Applications: SMPS, PFC, snubber
C A
Chip Type
IDC04S60CE
VBR 600V
IF 4A
Die Size 1.146 x 0.968 mm2
Package sawn on foil
Mechanical Parameter Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Anode metal Cathode metal Die bond Wire bond Reject ink dot size Recommended storage environment 1.146x 0.968 0.909 x 0.731 1.11 355 100 6190 Photoimide 3200 nm Al Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C µm mm mm2
Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009
IDC04S60CE
Maximum Ratings Parameter Repetitive peak reverse
voltage DC blocking
voltage Continuous forward current limited by Tvjmax Surge non repetitive forward current sine halfwave Repetitive peak forward current limited by Tvjmax Non-repetitive peak forward current Operating junction and storage temperature Symbol VRRM VDC IF IF,SM IF,RM IF,max Tvj , Tstg Tvj < 150°C TC =25° C , tP =10 ms TC = 100° C , Tvj = 1 50 ° C , D= 0 . 1 TC =25° C , t p = 1 0µs Con...