IDC05S120E

1200V thinQ! Features: TM IDC05S120E SiC Schottky Diode Applications: Motor Drives / Solar Inverters High Voltage CCM PFC Switch Mode Power Supplies High Voltage Multipliers A Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching Behaviour Qualified According to JEDEC1) Based on Target Applications www.DataSheet4U.net C Chip Type IDC05S120E VBR 1200V IF 5A Die Size 1.692 x 1.692 mm2 Package sawn on foil Mechanical parameters Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 1.692 x 1.692 1.156 x 1.156 2.86 362 100 2360 Photoimide 3200 nm Al Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C µm mm mm2 Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009 IDC05S120E Maximum Ratings Parameter Repetitive peak reverse voltage DC blocking voltage Continuous forward current, limited by Tvjmax Surge non repetitive forward current, sine halfwave Repetitive peak forward current, limited by thermal resistance Rth Non-repetitive peak forward current i 2 t value Operating junction and storage temperature range Sy...