IDC06S60C

www.DataSheet4U.com IDC06S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability Applications: SMPS, PFC, snubber C A Chip Type IDC06S60C VBR 600V IF 6A Die Size 1.45 x 1.354 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment DataSheet4U.com 1.45x 1.354 mm 1.213 x 1.117 1.96 / 1.46 355 75 0 1861 pcs Photoimide 3200 nm Al mm µm mm deg 2 DataShee 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C DataSheet4U.com Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006 DataSheet 4 U .com www.DataSheet4U.com IDC06S60C Maximum Ratings Parameter Repetitive peak reverse voltage DC blocking voltage Continuous forward current limited by Tjmax Surge non repetitive forward current sine halfwave Symbol V RRM V DC IF IF,SM I F,RM I F,max Tj , Ts t g Condition Value 600 600 6 Unit V TC =25° C, tP =10 ms TC = 100 ° C, T j = 1 5 0 ° C, D...