IDC06S60CE

IDC06S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery www.DataSheet4U.net High surge current capability Applications: SMPS, PFC, snubber C A Chip Type IDC06S60CE VBR 600V IF 6A Die Size 1.45 x 1.354 mm2 Package sawn on foil Mechanical Parameter Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Anode metal Cathode metal Die bond Wire bond Reject ink dot size Recommended storage environment 1.45x 1.354 1.213 x 1.117 1.96 355 100 3449 Photoimide 3200 nm Al Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C µm mm mm2 Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009 IDC06S60CE Maximum Ratings Parameter Repetitive peak reverse voltage DC blocking voltage Continuous forward current limited by Tvjmax Surge non repetitive forward current sine halfwave Repetitive peak forward current limited by Tvjmax Non-repetitive peak forward current Operating junction and storage temperature Symbol VRRM VDC IF IF,SM IF,RM IF,max Tvj , Tstg Tvj < 150°C TC =25° C , tP =10 ms TC = 100° C , Tvj = 1 50 ° C , D= 0 . 1 TC =25° C , t p = 1 0µs Condi...