IDC08D120T6M

IDC08D120T6M Diode EMCON 4 Medium Power Chip FEATURES: 1200V EMCON 4 technology soft, fast switching This chip is used for: low / medium power modules A low reverse recovery charge small temperature coefficient C Applications: low / medium power drives Chip Type VR IF IDC08D120T6M 1200V 10A Die Size 2.20 x 3.41 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Pad metall Backside metall Die bond Wire bond Reject ink dot size Recommended storage environment 2.20 x 3.41 7.50 / 3.55 mm2 1.246 x 2.456 110 µm 150 mm 180 deg 2024 pcs Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AIM PMD D CID T, L4667B, Edition 0.9, 26.06.07 IDC08D120T6M Maximum Ratings Parameter Symbol Condition Value Unit Repetitive peak reverse voltage Continuous forward current limited by Tjmax Maximum repetitive forward current limited by Tjmax Maximum junction and storage temperature Reverse bias safe operating area2) (RBSOA) VRRM IF IFRM 1200 V 1) A 20 Tvj,max , Tstg -40...+175 °C I F , m a x = 20A, V R,max = 1200V, Tvj,op ≤ 150°C, P max = tbd kW 1 ) depending on thermal properties of assemb...