DatasheetsPDF.com

IDC08S120E Datasheet

Part Number IDC08S120E
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Schottky Diode
Datasheet IDC08S120E DatasheetIDC08S120E Datasheet (PDF)

IDC08S120E 1200V thinQ!TM SiC Schottky Diode Features: Revolutionary Semiconductor Material Silicon Carbide • Switching Behaviour Benchmark • No Reverse Recovery / No Forward Recovery • Temperature Independent Switching Behaviour www.DataSheet4U.net • Qualified According to JEDEC1) Based on Target Applications • Applications: • • • • Motor Drives / Solar Inverters High Voltage CCM PFC Switch Mode Power Supplies High Voltage Multipliers A C Chip Type IDC08S120E VBR 1200V IF 7.5A Die Size 2.0.

  IDC08S120E   IDC08S120E






Schottky Diode

IDC08S120E 1200V thinQ!TM SiC Schottky Diode Features: Revolutionary Semiconductor Material Silicon Carbide • Switching Behaviour Benchmark • No Reverse Recovery / No Forward Recovery • Temperature Independent Switching Behaviour www.DataSheet4U.net • Qualified According to JEDEC1) Based on Target Applications • Applications: • • • • Motor Drives / Solar Inverters High Voltage CCM PFC Switch Mode Power Supplies High Voltage Multipliers A C Chip Type IDC08S120E VBR 1200V IF 7.5A Die Size 2.012 x 2.012 mm2 Package sawn on foil Mechanical Parameters Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 2.012 x 2.012 1.476 x 1.476 4.05 362 100 1652 Photoimide 3200 nm Al Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C µm mm mm2 Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009 IDC08S120E Maximum Ratings Parameter Repetitive peak reverse voltage DC blocking voltage Continuous forward current, limited by Tvjmax Surge non repetitive forward current, sine halfwave Repetitive peak forward current, limited by thermal resistance Rth Non-repetitive peak forward current i 2 t value Operating junction and storage temperature range Symbo.


2011-07-07 : 2SB0928    2SB0928A    2SB928    2SB928A    2SB0929    2SB0929A    2SB929    2SB929A    2SB0930    2SB0930A   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)