IDC08S120E
1200V thinQ!TM SiC Schottky Diode
Features: Revolutionary Semiconductor Material Silicon Carbide • Switching Behaviour Benchmark • No Reverse Recovery / No Forward Recovery • Temperature Independent Switching Behaviour www.DataSheet4U.net • Qualified According to JEDEC1) Based on Target Applications • Applications: • • • • Motor Drives / Solar Inverters High Voltage CCM PFC Switch Mode Power Supplies High Voltage Multipliers
A
C
Chip Type
IDC08S120E
VBR 1200V
IF 7.5A
Die Size 2.0.
Schottky Diode
IDC08S120E
1200V thinQ!TM SiC Schottky Diode
Features: Revolutionary Semiconductor Material Silicon Carbide • Switching Behaviour Benchmark • No Reverse Recovery / No Forward Recovery • Temperature Independent Switching Behaviour www.DataSheet4U.net • Qualified According to JEDEC1) Based on Target Applications • Applications: • • • • Motor Drives / Solar Inverters High Voltage CCM PFC Switch Mode Power Supplies High Voltage Multipliers
A
C
Chip Type
IDC08S120E
VBR 1200V
IF 7.5A
Die Size 2.012 x 2.012 mm2
Package sawn on foil
Mechanical Parameters Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 2.012 x 2.012 1.476 x 1.476 4.05 362 100 1652 Photoimide 3200 nm Al Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C µm mm mm2
Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009
IDC08S120E
Maximum Ratings Parameter Repetitive peak reverse voltage DC blocking voltage Continuous forward current, limited by Tvjmax Surge non repetitive forward current, sine halfwave Repetitive peak forward current, limited by thermal resistance Rth Non-repetitive peak forward current i 2 t value Operating junction and storage temperature range Symbo.