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IDD09E60

Infineon Technologies

Fast Switching Emitter Controlled Diode

Fast Switching Emitter Controlled Diode Feature • 600V Emitter Controlled technology • Fast recovery • Soft switching • ...


Infineon Technologies

IDD09E60

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Description
Fast Switching Emitter Controlled Diode Feature 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175°C operating temperature Easy paralleling IDD09E60 Product Summary VRRM 600 IF VF Tjmax 9 1.5 175 V A V °C PG-TO252-3 Type IDD09E60 Package PG-TO252-3 Ordering Code Marking Pin 1 PIN 2,4 PIN 3 - D09E60 NC C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified PPaararmameteerter SymSybmobl ol RReeppeteittiviteivpeepakearekverersveevrosletagveoltage CCoonntintiunoouussfofrowrawrad rcdurcreunrrt ent VRRVMR R M IF TTCC==2255°CC TTCC==9900°CC SSuurgregenonnornepreetpitievteitfiovrewfaordrwcaurrrdencturrent TMTCaC=x=i2m255u°mCC,,rtetppp==e1t01it0imvems,fsos,rinswienaerhdahlcfawulfrawrveaenvte TMC a=x2im5Cum, tprleimpietetditibvyetjf,moarxw, Dar=d0c.5urrent PToCw=e2r5d°Cis,stippalitmiointed by Tjmax, D=0.5 TPCo=w2e5rCdissipation TTCC==2950°CC IF IFSMI F S M IFRMI F R M PtotPt o t OTpCe=r9a0ti°nCg junction temperature Tj SOtopraegraettienmgpaenradtusretorage temperature SSooldldereinrgintgemtepmerpaeturraeture 1r.e6fmlomw(0s.o0l6d3eirnin.)gfr,oMmScLas3e for 10 s Tj , TTssttgg TS TS VaVlualeue 606000 191.39.3 1313 4040 292.59.5 57.7 573.72.7 -3402….7+175 -55-5..5.+...1+71550 262060 UUnint it VV A A A A WW °C°C °C Rev. 2.4 Page 1 2013­12­05 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footpri...




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