3rd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching...
3rd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark
No reverse recovery / No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown
voltage tested at 20mA2) Optimized for high temperature operation Lowest Figure of Merit QC/IF
Product Summary VDC QC IF; TC< 130 °C
thinQ! 3G Diode designed for fast switching applications like: SMPS e.g.; CCM PFC Motor Drives; Solar Applications; UPS
IDD10SG60C
600 V 16 nC 10 A
Type IDD10SG60C
Package PG-TO252-3
Marking D10G60C
Pin 1 n.c.
Pin 2 A
Pin 3 C
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
I F T C<130 °C
Surge non-repetitive forward current, I F,SM sine halfwave
T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms
Non-repetitive peak forward cur...
