IDDD06G65C6
6th Generation CoolSiC™
650V SiC Schottky Diode
The CoolSiC™ generation G is the leading edge technology f...
IDDD06G65C6
6th Generation CoolSiC™
650V SiC Schottky Diode
The CoolSiC™ generation G is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF . The CoolSiC™ Schottky diode V G has been designed to complement our V and V CoolMOS™ families, meeting the most stringent application requirements in this
voltage range.
Table 1
Key performance parameters
Parameter
Value
Unit
VRRM 650 V
QC (VR = 400 V)
9.6
nC
EC (VR = 400 V) IF (TC ≤ 0 °C, D = 1)
1.6 6
µJ A
VF (IF = 6 A, Tj = 25 °C)
1.25
V
Table 2
Package information
Type / ordering Code Package
IDDD06G65C6
PG-HDSOP-10-1
Marking D0665C6
PG-HDSOP-10-1
Cathode
Pin 6-10 Pin 3-5
Pin 1-2: n.c. Pin 3-5: Anode Pin 6-1...
