SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
IDH06G65C5
Final Datasheet
Rev. 2.2, 2012-12-1...
SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
IDH06G65C5
Final Datasheet
Rev. 2.2, 2012-12-10
Power Management & Multimarket
5th Generation thinQ!™ SiC Schottky Diode
1
Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. The Infineon proprietary diffusion soldering process,
already introduced with G3 is now combined with a new, more compact design and
thin-wafer technology. The result is a new family of products showing improved
efficiency over all load conditions, resulting from both the improved thermal
characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this
voltage range.
Features
Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown
voltage tested at 14 mA2) Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduce...