3rd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching...
3rd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark
No reverse recovery / No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown
voltage tested at 20mA2) Optimized for high temperature operation Lowest Figure of Merit QC/IF
Product Summary VDC QC IF; TC< 130 °C
IDH06SG60C
600 V 8 nC 6A
thinQ! 3G Diode designed for fast switching applications like: SMPS e.g.; CCM PFC Motor Drives; Solar Applications; UPS
Type IDH06SG60C
Package PG-TO220-2
Marking D06G60C
Pin 1 C
Pin 2 A
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
IF
T C<130 °C
Surge non-repetitive forward current, I F,SM sine halfwave
T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms
Non-repetitive peak forward current i ²t value
I F,max ∫i 2dt
T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms
Repetitive peak reverse
voltage
V RRM T j=25 °C
Diode dv/dt ruggedness
dv/ dt VR= 0….480 V
Power dissipation
P tot
T C=25 °C
Operating and storage temperature Soldering temperature, wavesoldering only allowed at leads Mounting torque
T j, T stg T sold
1.6mm (0.063 in.) from case for 10s
M3 and M3.5 screws
Value 6 32 23
190 5.1 2.5 600 50 71 -55 ... 175 260 60
Unit A
A2s V V/ns W °C
Ncm
Rev. 2.4
page 1
2012-12-12
Parameter
Sym...
