IDH08G120C5

Diode Silicon Carbide Schottky Diode IDH08G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.1 2017-07-21 Industrial Power Control IDH08G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode CoolSiCTM SiC Schottky Diode Features:  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance  Extended surge current capability  Specified dv/dt ruggedness  Qualified according to JEDEC1) for target applications  Pb-free lead plating; RoHS compliant Benefits  System efficiency improvement over Si diodes  Enabling higher frequency / increased power density solutions  System size / cost savings due to reduced heatsink requirements and smaller magnetics  Reduced EMI  Highest efficiency across the entire load range  Robust diode operation during surge events  High reliability  RelatedLinks: www.infineon.com/sic Applications  Solar inverters  Uninterruptable power supplies  Motor drives  Power Factor Correction Package pin definitions  Pin 1 and backside – cathode  Pin 2 – anode Key Performance and Package Parameters Type IDH08G120C5 VDC IF 1200V 8A 1) J-STD20 and JESD22 Final Data Sheet QC 28nC Tj,max Marking 175°C D0812C5 Package PG-TO220-2-1 2 Rev. 2.1, 2017-07-21 IDH08G120C5 5th Generation CoolSiC™ 1200 V...