IDH09SG60C
3rd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide...
IDH09SG60C
3rd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery / No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown
voltage tested at 20mA2) Optimized for high temperature operation
www.DataSheet4U.net Lowest Figure
Product Summary V DC QC I F; T C< 130 °C 600 15 9 V nC A
of Merit QC/IF
thinQ! 3G Diode designed for fast switching applications like: SMPS e.g.; CCM PFC Motor Drives; Solar Applications; UPS Type IDH09SG60C Package PG-TO220-2 Marking D09G60C Pin 1 C Pin 2 A
Maximum ratings Parameter Continuous forward current Symbol Conditions IF T C<130 °C T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms V RRM dv/ dt P tot T j, T stg T sold 1.6mm (0.063 in.) from case for 10s M3 and M3.5 screws T j=25 °C VR= 0….480 V T C=25 °C Value 9 49 42 400 12 9 600 50 115 -55 ... 175 260 60 Ncm V V/ns W °C A2s Unit A
Surge non-repetitive forward current, I F,SM sine halfwave Non-repetitive peak forward current i ²t value Repetitive peak reverse
voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Soldering temperature, wavesoldering only allowed at leads Mounting torque I F,max ∫i 2dt
Rev. 2.3
page 1
2009-08-04
IDH09SG60C
Param...
