Diode
Silicon Carbide Schottky Diode
IDH20G120C5
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH20G120C5
Rev. 2.1 ...
Diode
Silicon Carbide Schottky Diode
IDH20G120C5
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH20G120C5
Rev. 2.1 2017-07-21
Industrial Power Control
IDH20G120C5
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
CoolSiCTM SiC Schottky Diode
Features:
Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward
voltage even at high operating temperature Tight forward
voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant
Benefits
System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size / cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability RelatedLinks: www.infineon.com/sic
Applications
Solar inverters Uninterruptable power supplies Motor drives Power Factor Correction
Package pin definitions
Pin 1 and backside – cathode Pin 2 – anode
Key Performance and Package Parameters
Type IDH20G120C5
VDC
IF
1200V
20A
1) J-STD20 and JESD22
Final Data Sheet
QC 82nC
Tj,max Marking 175°C D2012C5
Package PG-TO220-2-1
2
Rev. 2.1, 2017-07-21
IDH20G120C5
5th Generation CoolSiC™ 1200 V Si...