IDH20G65C6

IDH20G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). The CoolSiC™ Schottky diode 650 V G6 has been designed to complement our 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range. Table 1 Key performance parameters Parameter Value Unit VRRM 650 V QC (VR = 400 V) 26.8 nC EC (VR = 400 V) 5.3 µJ IF (TC ≤ 135 °C, D = 1) 20 A VF (IF = 20 A, Tj = 25 °C) 1.25 V PG-TO220-2 CASE 1) Cathode 1 2) Anode 2 Table 2 Package information Type / ordering Code Package IDH20G65C6 PG-TO220-2 Marking D2065C6 Features  Best in class forward voltage (1.25 V)  Best in class figure of merit (Qc x VF)  High dv/dt ruggedness (150 V/ns) Benefits  System efficiency improvement  System cost and size savings due to the reduced cooling requirements  Enabling higher frequency and increased power density Potential Applications  Power factor correction in SMPS  Solar inverter  Uninterruptible power supply Product Validation  Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22) ...