IDK05G65C5

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDK05G65C5 Final Data Sheet Rev. 2.1, 2017-08-11 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range. Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Qualified according to JEDEC1) for target applications  Breakdown voltage tested at 11 mA2)  Optimized for high temperature operation Benefits  System efficiency improvement over Si diodes  System cost / size savings due to reduced cooling requirements  Enabling higher frequency / increased power density solutions  Higher system reliability due to lower operating temperatures  Reduce...