IDL10G65C5

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDL10G65C5 Final Data Sheet Rev. 2.0, 2013-12-05 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode IDL10G65C5 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range. ThinPAK 8x8 Bottom view Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse re...