Ultrafast Recovery Diode
INCHANGE Semiconductor
IDP20E65D2
FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low...
Ultrafast Recovery Diode
INCHANGE Semiconductor
IDP20E65D2
FEATURES ·Ultrafast Recovery Time ·Low Forward
Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in switching power supplies and other power
Switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM Peak Repetitive Reverse
Voltage
650
V
IF(AV) IFSM TJ
Average Rectified Forward Current
40
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
120
A
wave, single phase, tp=8.3ms)
Junction Temperature
-55~175 ℃
Tstg
Storage Temperature Range
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.25 ℃/W
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Ultrafast Recovery Diode
INCHANGE Semiconductor
IDP20E65D2
ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VF
Maximum Instantaneous Forward
Voltage IF= 20A
2.2
V
IR
Maximum Instantaneous Reverse Current VRRM=600V
40
μA
trr
Maximum Reverse Recovery Time
IF= 1A;di/dt=200A/us;VR=30V
32
ns
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a gu...