Preliminary data
IDP30E120 IDB30E120
Product Summary VRRM IF VF Tjmax 1200 30 1.65 150
P-TO220-2-2.
Fast Switching EmC...
Preliminary data
IDP30E120 IDB30E120
Product Summary VRRM IF VF Tjmax 1200 30 1.65 150
P-TO220-2-2.
Fast Switching EmCon Diode
Feature
1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward
voltage Easy paralleling
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V A V °C
P-TO220-3.SMD
Type IDP30E120 IDB30E120
Package P-TO220-2-2.
Ordering Code Q67040-S4390
Marking D30E120 D30E120
Pin 1 C NC
PIN 2 A C
PIN 3 A
P-TO220-3.SMD Q67040-S4383
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Repetitive peak reverse
voltage Continous forward current
TC=25°C TC=90°C
Symbol VRRM IF
Value 1200 50 30
Unit V A
Surge non repetitive forward current
TC=25°C, tp =10 ms, sine halfwave
IFSM IFRM Ptot
102 76.5 W 138 66
Maximum repetitive forward current
TC=25°C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25°C TC=90°C
Operating and storage temperature Soldering temperature
1.6mm(0.063 in.) from case for 10s
Tj , Tstg TS
-55...+150 260
°C °C
Page 1
2001-12-12
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 1)
IDP30E120 IDB30E120
Symbol min. RthJC RthJA RthJA -
Values typ. 35 max. 0.9 62 62 -
Unit
K/W
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Reverse leakage current
VR =1200V, Tj=25°C VR =1200...