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IDT10S60C Datasheet

Part Number IDT10S60C
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description 2nd Generation thinQ SiC Schottky Diode
Datasheet IDT10S60C DatasheetIDT10S60C Datasheet (PDF)

www.DataSheet4U.com IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) Product Summary V DC Qc IF 600 24 10 V nC A PG-TO220-2-2 thinQ! 2.

  IDT10S60C   IDT10S60C






2nd Generation thinQ SiC Schottky Diode

www.DataSheet4U.com IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) Product Summary V DC Qc IF 600 24 10 V nC A PG-TO220-2-2 thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC • Motor Drives Type IDT10S60C Package PG-TO220-2-2 Marking I F=5 A, T j=25 °C D10S60C Pin 1 C Pin 2 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<140 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 10 15 84 Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i²t value Repetitive peak reverse voltage Diode ruggedness dv/dt Power dissipation Operating and storage temperature Mounting torque Rev. 2.0 I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg 39 350 35 600 A2s V V/ns W °C Ncm 2006-03-14 VR=0…480V T C=25 °C 50 100 -55 ... 175 M3 and M3.5 screws page 1 60 IDT10S60C Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - cas.


2006-12-07 : 24AA024    24AA025    2SC5991    79RC32364    AT43320    AT43DK301    AT43DK312A    AT43USB321    CSC460    CYNCP80192   


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