IDT12S60C

www.DataSheet4U.com IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 5mA2) Product Summary V DC Qc IF 600 30 12 V nC A PG-TO220-2-2 thinQ! 2G Diode specially designed for fast switching applications like: CCM PFC Motor Drives Type IDT12S60C Package PG-TO220-2-2 Marking D12S60C Pin 1 C Pin 2 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<140 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 12 18 98 Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i²t value Repetitive peak reverse voltage Diode ruggedness dv/dt Power dissipation Operating and storage temperature Mounting torque I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg 49 410 48 600 A2s V V/ns W °C Ncm VR=0…480V T C=25 °C 50 115 -55 ... 175 M3 and M3.5 screws 60 Rev. 2.0 page 1 2006-03-14 IDT12S60C Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resist...