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IDT16S60C Datasheet

Part Number IDT16S60C
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description 2nd Generation thinQ SiC Schottky Diode
Datasheet IDT16S60C DatasheetIDT16S60C Datasheet (PDF)

www.DataSheet4U.com IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) Product Summary V DC Qc IF 600 38 16 V nC A PG-TO220-2-2 thinQ! 2.

  IDT16S60C   IDT16S60C






2nd Generation thinQ SiC Schottky Diode

www.DataSheet4U.com IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) Product Summary V DC Qc IF 600 38 16 V nC A PG-TO220-2-2 thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC • Motor Drives Type IDT16S60C Package PG-TO220-2-2 Marking D16S60C Pin 1 C Pin 2 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<140 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 16 23 118 64 528 69 600 VR=0…480V T C=25 °C 50 136 -55 ... 175 M3 and M3.5 screws 60 A2s V V/ns W °C Ncm Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg Rev. 2.0 page 1 2006-03-14 IDT16S60C Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistanc.


2006-12-07 : 24AA024    24AA025    2SC5991    79RC32364    AT43320    AT43DK301    AT43DK312A    AT43USB321    CSC460    CYNCP80192   


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