4-BIT. IDT6168LA Datasheet

IDT6168LA Datasheet PDF

Part IDT6168LA
Description CMOS STATIC RAM 16K (4K x 4-BIT)
Feature IDT6168LA; CMOS STATIC RAM 16K (4K x 4-BIT) Integrated Device Technology, Inc. IDT6168SA IDT6168LA FEATURES: .
Manufacture Integrated Device Technology
Datasheet
Download IDT6168LA Datasheet

CMOS STATIC RAM 16K (4K x 4-BIT) Integrated Device Technolog IDT6168LA Datasheet





IDT6168LA
Integrated Device Technology, Inc.
CMOS STATIC RAM
16K (4K x 4-BIT)
IDT6168SA
IDT6168LA
FEATURES:
• High-speed (equal access and cycle time)
— Military: 15/20/25/35/45ns (max.)
— Commercial: 15/20/25/35ns (max.)
• Low power consumption
• Battery backup operation—2V data retention voltage
(IDT6168LA only)
• Available in high-density 20-pin ceramic or plastic DIP, 20-
pin SOIC.
• Produced with advanced CMOS high-performance
technology
• CMOS process virtually eliminates alpha particle soft-error
rates
• Bidirectional data input and output
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT6168 is a 16,384-bit high-speed static RAM orga-
nized as 4K x 4. It is fabricated using lDT’s high-performance,
high-reliability CMOS technology. This state-of-the-art tech-
nology, combined with innovative circuit design techniques,
provides a cost-effective approach for high-speed memory
applications.
Access times as fast 15ns are available. The circuit also
offers a reduced power standby mode. When CS goes HIGH,
the circuit will automatically go to, and remain in, a standby
mode as long as CS remains HIGH. This capability provides
significant system-level power and cooling savings. The low-
power (LA) version also offers a battery backup data retention
capability where the circuit typically consumes only 1µW
operating off a 2V battery. All inputs and outputs of the
IDT6168 are TTL-compatible and operate from a single 5V
supply.
The IDT6168 is packaged in either a space saving 20-pin,
300-mil ceramic or plastic DIP, 20-pin SOIC providing high
board-level packing densities.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
A0
VCC
GND
ADDRESS
DECODER
16,384-BIT
MEMORY ARRAY
A11
I/O0
I/O CONTROL
I/O1
INPUT
DATA
I/O2 CONTROL
I/O3
CS
WE
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGE
©1996 Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
5.3
3090 drw 01
MAY 1996
3090/2
1



IDT6168LA
IDT6168SA/LA
CMOS STATIC RAM 16K (4K x 4-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
A0 1
A1 2
A2 3
A3 4
A4 5
A5 6
P20-1,
D20-1,
&
SO20-2
A6 7
A7 8
CS 9
GND 10
20
19
18
17
16
15
14
13
12
11
DIP/SOJ
TOP VIEW
VCC
A11
A10
A9
A8
I/O3
I/O2
I/O1
I/O0
WE
3090 drw 02
TRUTH TABLE(1)
Mode
CS WE
Standby
H
X
Read
LH
Write
LL
NOTE:
1. H = VIH, L = VIL, X = Don't Care
Output
High-Z
DOUT
DIN
Power
Standby
Active
Active
3090 tbl 03
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM
TA
TBIAS
TSTG
PT
IOUT
Rating
Com’l.
Terminal Voltage –0.5 to +7.0
with Respect
to GND
Operating
Temperature
0 to +70
Temperature –55 to +125
Under Bias
Storage
–55 to +125
Temperature
Power Dissipation
1.0
DC Output
Current
50
Mil. Unit
–0.5 to +7.0 V
–55 to +125 °C
–65 to +135 °C
–65 to +150 °C
1.0 W
50 mA
PIN DESCRIPTIONS
Name
A0–A11
CS
WE
I/O0-3
VCC
GND
Description
Address Inputs
Chip Select
Write Enable
Data Input/Output
Power
Ground
NOTE:
3090 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING
3090 tbl 01 CONDITIONS
CAPACITANCE (TA = +25°C, F = 1.0MHZ)
Symbol
Parameter
Min. Typ. Max. Unit
VCC Supply Voltage
4.5 5.0 5.5 V
GND Supply Voltage
000V
VIH Input High Voltage 2.2 — 6.0 V
VIL Input Low Voltage –0.5(1) — 0.8 V
NOTE:
3090 tbl 05
1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
Symbol Parameter(1)
Conditions Max. Unit
CIN Input Capacitance
VIN = 0V
7 pF
CI/O I/O Capacitance
VOUT = 0V 7 pF
NOTE:
3090 tbl 02
1. This parameter is determined by device characterization, but is not
production tested.
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Military
Commercial
Temperature
–55°C to +125°C
0°C to +70°C
GND
0V
0V
VCC
5V ± 10%
5V ± 10%
3090 tbl 06
5.3 2



IDT6168LA
IDT6168SA/LA
CMOS STATIC RAM 16K (4K x 4-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
6168SA15
Symbol
ICC1
ICC2
ISB
ISB1
Parameter
Operating Power Supply Current
CS VIL, Outputs Open,
VCC = Max., f = 0(2)
Dynamic Operating Current
CS VIL, Outputs Open,
VCC = Max., f = fMAX(2)
Standby Power Supply Current
(TTL Level)
CS VIH, VCC = Max.,
Outputs Open, f = fMAX(2)
Full Standby Power Supply Current
(CMOS Level)
CS VHC, VCC = Max.,
VIN VHC or VIN VLC, f = 0(2)
Power Com’l. Mil.
SA 110 120
LA — —
SA 145 165
LA — —
SA 55 60
LA — —
SA 20 20
LA — —
DC ELECTRICAL CHARACTERISTICS (CONTINUED)(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
6168SA25
6168LA25
Symbol
Parameter
Power Com’l. Mil.
ICC1 Operating Power Supply Current
CS VIL, Outputs Open,
VCC = Max., f = 0(2)
SA 90
LA 70
100
80
ICC2 Dynamic Operating Current
CS VIL, Outputs Open,
VCC = Max., f = fMAX(2)
ISB Standby Power Supply Current
(TTL Level)
CS VIH, VCC = Max.,
Outputs Open, f = fMAX(2)
SA 110
LA 90
SA 35
LA 25
120
100
45
30
ISB1 Full Standby Power Supply Current
SA 3
10
(CMOS Level)
CS VHC, VCC = Max.,
LA 0.5 0.3
VIN VHC or VIN VLC, f = 0(2)
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are cycling at fMAX. f = 0 means no address inputs are changing.
6168SA35
6168LA35
Com’l. Mil.
90 —
70 —
100 —
80 —
30 —
20 —
3—
0.5 —
6168SA20
6168LA20
Com’l. Mil.
90 100
Unit
mA
70 80
120 120 mA
100 110
45 45 mA
30 35
20 20 mA
0.5 5
3090 tbl 07
6168SA45
6168LA45
Com’l. Mil.
— 100
Unit
mA
— 80
— 110 mA
— 80
— 35 mA
— 25
— 10 mA
— 0.3
3090 tbl 08
DC ELECTRICAL CHARACTERISTICS VCC = 5.0V ± 10%
Symbol
|ILI|
|ILO|
VOL
VOH
Parameter
Test Condition
Input Leakage Current
Output Leakage Current
VCC = Max.,
VIN = GND to VCC
VCC = Max., CS = VIH,
VOUT = GND to VCC
Output LOW Voltage IOL = 10mA, VCC = Min.
IOL = 8mA, VCC = Min.
Output HIGH Voltage IOH = –4mA, VCC = Min.
MIL
COM’L
MIL
COM’L
IDT6168SA
Min.
Max.
— 10
—2
— 10
—2
— 0.5
— 0.4
2.4 —
IDT6168LA
Min.
Max.
—5
—2
—5
—2
— 0.5
— 0.4
2.4 —
Unit
µA
µA
V
V
3090 tbl 09
5.3 3






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