LOW POWER 2V CMOS SRAM 1 MEG (64K x 16-BIT)
Integrated Device Technology, Inc.
ADVANCE INFORMATION IDT71T016
FEATURES:...
LOW POWER 2V
CMOS SRAM 1 MEG (64K x 16-BIT)
Integrated Device Technology, Inc.
ADVANCE INFORMATION IDT71T016
FEATURES:
64K x 16 Organization Wide Operating
Voltage Range: 1.8 to 2.7V Speed Grades: 150ns, 200ns Low Operating Power: 20mA (max) Low Standby Power: 5µA (max) Low-
Voltage Data Retention: 1.5V (min) Available in a 44-pin TSOP package
DESCRIPTION:
The IDT71T016 is a 1,048,576-bit very low-power Static RAM organized as 64K x 16. It is fabricated using IDT’s highreliability
CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for low-power memory needs. It uses a 6-transistor memory cell. Operation is from a single extended-range 2.5V supply. This extended supply range makes the device ideally suited for unregulated battery-powered applications. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. The IDT71T016 is packaged in a JEDEC standard 44-pin TSOP Type II.
FUNCTIONAL BLOCK DIAGRAM
OE
Output Enable Buffer
A0 - A15
Address Buffers
Row / Column Decoders
I/O 15 Chip Enable Buffer 8 High Byte I/O Buffer 8
CS
I/O 8
WE
Write Enable Buffer
64K x 16 Memory Array
16
Sense Amps and Write Drivers I/O 7 8 Low Byte I/O Buffer 8
I/O 0
BHE
Byte Enable Buffers
BLE
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