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IDT71V25781 Datasheet

Part Number IDT71V25781
Manufacturers IDT
Logo IDT
Description (IDT71V25761 / IDT71V25781) Synchronous SRAMs
Datasheet IDT71V25781 DatasheetIDT71V25781 Datasheet (PDF)

www.DataSheet4U.com 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect x x IDT71V25761 IDT71V25781 Features 128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial: – 200MHz 3.1ns clock access time Commercial and Industrial: – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write enab.

  IDT71V25781   IDT71V25781






Part Number IDT71V2578SA
Manufacturers Integrated Device Technology
Logo Integrated Device Technology
Description 128K X 36/ 256K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Pipelined Outputs/ Burst Counter/ Single Cycle Deselect
Datasheet IDT71V25781 DatasheetIDT71V2578SA Datasheet (PDF)

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect x x IDT71V2576S IDT71V2578S IDT71V2576SA IDT71V2578SA Features 128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) 3.3V cor.

  IDT71V25781   IDT71V25781







Part Number IDT71V2578S
Manufacturers Integrated Device Technology
Logo Integrated Device Technology
Description 128K X 36/ 256K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Pipelined Outputs/ Burst Counter/ Single Cycle Deselect
Datasheet IDT71V25781 DatasheetIDT71V2578S Datasheet (PDF)

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect x x IDT71V2576S IDT71V2578S IDT71V2576SA IDT71V2578SA Features 128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) 3.3V cor.

  IDT71V25781   IDT71V25781







(IDT71V25761 / IDT71V25781) Synchronous SRAMs

www.DataSheet4U.com 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect x x IDT71V25761 IDT71V25781 Features 128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial: – 200MHz 3.1ns clock access time Commercial and Industrial: – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) 3.3V core power supply Power down controlled by ZZ input 2.5V I/O Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array Description The IDT71V25761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V25761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle. The burst mode feature offers the highest level of performance to the system designer, as the IDT71V25761/718 can provide four cycles of data for a single address presented to the SRAM. An internal burst address counter accepts the first cycle address from the processor, initiating the access sequence. The first cycle of output data will be pipelined for one cycle before it is available on the next rising clock edge. If burst mode operation is selected (ADV=LOW),.


2007-02-21 : ACST6    ATS625LSG    BCAP0350    CS5535    DG2711    DG2714    DG271B    DG271MIL    DG2735    DG2736   


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