IFF2400P17AE440989

TechnicalInformation IFF2400P17AE440989 Generalinformation  IPMfortypicalvoltagesupto690VRMS Ratedoutputcurrent650ARMS  Features - Integrated current, voltage and temperature measurement - Tvjop max=150°C - Real time Tvj simulation - IGBT4 technology - Smart protection - TIM and pressfit technology - Modbus interface - 100% tested IPM - ROHS compliant - Integrated chip current : 2400A - Integrated chip voltage: 1700V  Topology Application Heatsink Implemented sensors Driver signals IGBT Approvals Sales - name half bridge  Energy Storage, Smart Grid, Wind, Drives, Solar  air cooled  voltage, current, temperature  +15V  UL61800-5-1  IFF2400P17AE440989  Preliminarydata  preparedby:OW approvedby:ZF dateofpublication:2018-06-22 revision:2.3 1 TechnicalInformation IFF2400P17AE440989 Characteristicvalues  IGBTcharacteristicvalue Collector-emitter voltage IC = 2400 A, Tvj = 25°C IC = 2400 A, Tvj = 150°C Turn on energy loss IC = 2400 A, VDC = 900 V, LS = 17 nH, Tvj = 25°C IC = 2400 A, VDC = 900 V, LS = 17 nH, Tvj = 150°C Turn off energy loss IC = 2400 A, VDC = 900 V, LS = 17 nH, Tvj = 25°C IC = 2400 A, VDC = 900 V, LS = 17 nH, Tvj = 150°C Thermal resistance junction to ambient for diode due diode per IPM switch, Air flow rate= 550m³/h housing Thermal resistance junction to ambient for IGBT due IGBT per IPM switch, Air flow rate= 550m³/h housing Notes Tinlet = 25°C For further details about the thermal resistance ple...