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IGC03R60DE

Infineon

IGBT

IGC03R60DE TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in pac...


Infineon

IGC03R60DE

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Description
IGC03R60DE TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering: Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight parameter distribution Operating range of 1 to 20kHz Maximum junction temperature 175°C Short circuit capability of 5μs Best in class current versus package size performance Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Applications: Motor drives Used for: Discrete components and molded modules Chip Type IGC03R60DE VCE ICn 600V 2.5A Die Size 1.6 x 1.73 mm2 Package sawn on foil Mechanical Parameters Raster size Emitter pad size Gate pad size Area: total / active IGBT / active Diode Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size for original and sealed MBB bags Storage environment for open MBB bags 1.6 x 1.73 see chip drawing see chip drawing mm2 2.768 / 1.192 / 0.222 70 µm 200 mm 10182 Photoimide 3200 nm AlSiCu Ni Ag –system Electrically conductive epoxy glue and soft solder (temperature budget: 290°C for 1min. or 260°C for 1.5min.) Al, <250µm  0.65mm ; max 1.2mm Ambient atmosphere air, Temperature 17°C – 25°C...




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