IGC10T65QE

High Speed IGBT3 Chip IGC10T65QE Features:  650V Trench & Field Stop technology  high speed switching series third generation  low VCE(sat)  low EMI  low turn-off losses  positive temperature coefficient  qualified according to JEDEC for target applications Recommended for:  discrete components and modules Applications:  uninterruptible power supplies  welding converters  converters with high switching frequency C G E Chip Type VCE ICn1) Die Size Package IGC10T65QE 650V 20A 3.19 x 3.21mm2 sawn on foil 1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization Mechanical Parameters Die size Emitter pad size Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal 3.19 x 3.21 See chip drawing 0.361 x 0.513 10.24 70 200 2693 Photoimide 3200 nm AlSiCu Ni Ag –system mm2 µm mm Die bond Electrically conductive epoxy glue and soft solder Wire bond Reject ink dot size for original and sealed MBB bags Storage environment for open MBB bags Al, <500µm  0.65mm ; max 1.2mm Ambient atmosphere air, Temperature 17°C – 25°C, < 6 month Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month Edited by INFINEON Technologies, IFAG IPC TD VLS, L7541E, Rev 1.0, 01.08.2012 IGC10T65QE Maximum Ratings Parameter Symbol Collector-Emitter voltage, Tvj =25 C VCE DC collector current, limited by T...