IGBT
IGC28T65QE
High Speed IGBT3 Chip
Features • VCES = 650 V • ICn = 50 A • 650 V trench & field stop technology
• Low VCEs...
Description
IGC28T65QE
High Speed IGBT3 Chip
Features VCES = 650 V ICn = 50 A 650 V trench & field stop technology
Low VCEsat Low EMI
Low turn-off losses
Positive temperature coefficient Potential applications Uninterruptible power supplies
Welding converters
Converters with high switching frequency Product validation Technology qualified for industrial applications. Ready for validation in industrial applications
according to the relevant tests of IEC 60747 and 60749 or alternatively JEDEC47/20/22 Description Recommended for discrete components and modules
Type IGC28T65QE
Die size 6.57 mm x 4.2 mm
Delivery form Sawn on foil
Datasheet www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.00 2023-04-28
IGC28T65QE
High Speed IGBT3 Chip
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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