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IGT60R070D1 Transistor Datasheet PDF

600V enhancement-mode Power Transistor

600V enhancement-mode Power Transistor

　

　

Part Number	*IGT60R070D1*
Description	600V enhancement-mode Power Transistor
Feature	IGT60R070D1 IGT60R070D1 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) 1 SK G G SK 1 Benefits  Improves system efficiency  Improves power density  Enables higher operating frequency  System cost reduction savings  Reduces EMI Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,.
Manufacture	Infineon
Datasheet	Download IGT60R070D1 Datasheet

Part Number	*IGT60R070D1*
Description	600V enhancement-mode Power Transistor
Feature	IGT60R070D1 IGT60R070D1 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) 1 SK G G SK 1 Benefits  Improves system efficiency  Improves power density  Enables higher operating frequency  System cost reduction savings  Reduces EMI Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,.
Manufacture	Infineon
Datasheet	Download IGT60R070D1 Datasheet

IGT60R070D1

IGT60R070D1

IGT60R070D1

　

　

　

　

　

Part Number	*IGT60R070D1*
Description	600V enhancement-mode Power Transistor
Feature	IGT60R070D1 IGT60R070D1 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) 1 SK G G SK 1 Benefits  Improves system efficiency  Improves power density  Enables higher operating frequency  System cost reduction savings  Reduces EMI Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,.
Manufacture	Infineon
Datasheet	Download IGT60R070D1 Datasheet

Part Number	*IGT60R070D1*
Description	600V enhancement-mode Power Transistor
Feature	IGT60R070D1 IGT60R070D1 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) 1 SK G G SK 1 Benefits  Improves system efficiency  Improves power density  Enables higher operating frequency  System cost reduction savings  Reduces EMI Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,.
Manufacture	Infineon
Datasheet	Download IGT60R070D1 Datasheet

IGT60R070D1

IGT60R070D1

IGT60R070D1

　

　

　

　

　

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