mTMlJ~~~
Insulated Gate Bipolar Transistor
IGT6D11,E11
10 AMPERES 400, 500 VOLTS
EQUIV. ROS(ON) =0.27 il
This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of M...
