IKB30N65EH5

IKB30N65EH5 Highspeedswitchingseries5thgeneration TRENCHSTOPTM5highspeedswitchingIGBTcopackedwithfullrated currentRAPID1antiparalleldiode  FeaturesandBenefits: C HighspeedH5technologyoffering Best-in-Classefficiencyinhardswitchingandresonant topologies 650Vbreakdownvoltage LowQG IGBTcopackedwithfullratedcurrentRAPID1fastantiparallel diode Maximumjunctiontemperature175°C Pb-freeleadplating;RoHScompliant CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C PotentialApplications: EnergyGeneration -SolarStringInverter -SolarMicroInverter IndustrialPowerSupplies -IndustrialSMPS -IndustrialUPS MetalTreatment -Welding EnergyDistribution -EnergyStorage Infrastructure–Charge -Charger G E ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C IKB30N65EH5 650V 30A 1.65V Tvjmax 175°C Marking K30EEH5 Package PG-TO263-3 Datasheet www.infineon.com PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1 2018-01-11 IKB30N65EH5 Highspeedswitchingseries5thgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . ....