ILH100

ILH100 HERMETIC PHOTOTRANSISTOR OPTOCOUPLER FEATURES Operating Temperature Range, –55°C to +125°C Current Transfer Ratio Guaranteed from –55°C to +100°C Ambient Temperature Range High Current Transfer Ratio at Low Input Current Isolation Test Voltage, 3000 VDC Base Lead Available for Transistor Biasing Standard 8 Pin DIP Package DESCRIPTION The ILH100 is designed especially for hi-rel applications requiring optical isolation with high current transfer ratio and low saturation VCE. Each optocoupler consists of a light emitting diode and a NPN silicon phototransistor mounted and coupled in an 8 pin hermetically sealed DIP package. The ILH100's low input current makes it well suited for direct CMOS to LSTTL/TTL interfaces. Dimensions in inches (mm) .390±.005 (9.91±.13) 8 7 6 5 .320 (8.13) max. 4 .150 (3.81) max. .300 (7.62) typ. .010±.002 (.25±.05) 2 Siemens XXX XXXX XXYY .020 (.51) min. 1 2 3 7 Base 6 Anode .018±.002 (.46±.05) .100 ±.010 (2.54±.25) .125 (3.18) min. Cathode Collector 3 5 Emitter Maximum Ratings Emitter Reverse Voltage ................................................................................6.0 V Forward Current ..............................................................................60 mA Peak Forward Current(1) ...................................................................... 1 A Power Dissipation.........................................................................150 mW Derate Linearly from 25°C .........................