IM29LV001B

www.DataSheet4U.com Preliminary Specification IMT IM29LV001T and IM29LV001B 1 M Bit (128K x 8) 3.3V-Only Flash Memory Features: 0.40 µm, triple-poly double-metal CMOS process Single power supply operation 3.3V ± 10% for both read and write High endurance > 10,000 program/erase cycles Fast read access time 70 and 90 ns Single page erasability for optimal data alterability Page size: 512 bytes Hardwired data protection Inhibits program and erase operations of the top (IM29LV001T) or bottom (IM29LV001B) 32 pages of the array for false write and virus prevention. Flexible boot block configurability Fast program and erase operations: Byte program : < 35 µsec typical Page erase : < 7 msec typical Chip erase : < 2 sec typical Self-timed program/erase operations with end-of-cycle detection Data# Polling and Toggle Bit Inadvertent write protection Glitch filtering for WE# and CE# Low Vcc (< 2.2 V ) write inhibit Hardwired data protection Low Icc for power conservation Read: 6 ma typical Write: 10 ma typical Stand-by: 10 µA typical Compatible with JEDEC byte wide pinout and single-supply flash command standards Package types: 32-pin PLCC, TSOP and PDIP Others available upon request General Descriptions The IM29LV001T/B is a 1 Mega-bit, 5V-only page erasable flash memory organized as 128K X 8 bits.It is manufactured with IMT’s proprietary double metal, 0.40 µm CMOS flash technology. High performance cell design and advanced process technology attain b...